A DC-51.5 GHz Digital Step Attenuator With Sub-5 dB Insertion Loss and 3.1° RMS Phase Error

This article presents an ultrawideband and low-loss digital step attenuator (DSA) with a 15.5-/0.5-dB attenuation range/step. To reduce the insertion loss (IL), a merged attenuation cell is proposed to realize 4-/8-/12-dB attenuation. Moreover, a bridge capacitor is adopted in the merged attenuation cell to expand the bandwidth of the proposed DSA while reducing the phase error between different attenuation states. The proposed DSA is fabricated with a 65-nm bulk CMOS process with a compact core area of only 0.026 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. With measurements, over the entire operating bandwidth from dc to 51.5 GHz, it achieves an IL of less than 5 dB and root-mean-square (rms) attenuation/phase errors of less than 0.25 dB/3.1°, respectively.

Authors

Institutions

Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-04-16
DOI
https://doi.org/10.1109/lmwt.2025.3555936
Citations
2
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
1.46

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A DC-51.5 GHz Digital Step Attenuator With Sub-5 dB Insertion Loss and 3.1° RMS Phase Error

Ziang Zhang, Lianming Li, Qin Chen, Xuhao Jiang et al.
2 citations
IEEE Microwave and Wireless Technology Letters
Radio Frequency Integrated Circuit Design
1.46
article

A DC-51.5 GHz Digital Step Attenuator With Sub-5 dB Insertion Loss and 3.1° RMS Phase Error

Ziang Zhang, Lianming Li, Qin Chen, Xuhao Jiang, Xiangning Fan, Jianing He
article en
2 citations

Abstract

This article presents an ultrawideband and low-loss digital step attenuator (DSA) with a 15.5-/0.5-dB attenuation range/step. To reduce the insertion loss (IL), a merged attenuation cell is proposed to realize 4-/8-/12-dB attenuation. Moreover, a bridge capacitor is adopted in the merged attenuation cell to expand the bandwidth of the proposed DSA while reducing the phase error between different attenuation states. The proposed DSA is fabricated with a 65-nm bulk CMOS process with a compact core area of only 0.026 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. With measurements, over the entire operating bandwidth from dc to 51.5 GHz, it achieves an IL of less than 5 dB and root-mean-square (rms) attenuation/phase errors of less than 0.25 dB/3.1°, respectively.

IEEE Microwave and Wireless Technology LettersVol. 35(6)
Southeast University (CN)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 18%
Radio Frequency Integrated Circuit Design
1.46
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.