10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm<sup>2</sup> with a fully transparent tunnel junction
We report on the successful demonstration of an all metalorganic chemical vapor deposition (MOCVD) grown fully transparent tunnel junction (TJ) germicidal UV LED, resulting from the use of a lightly doped n<sup>-</sup>-AlGaN contact layer enabling rapid MOCVD growth optimization. We found that the optimal condition for LED performance was a 3 nm p<sup>++</sup>-Al<sub>0.6</sub>Ga<sub>0.4</sub>N / 9 nm n<sup>++</sup>-Al<sub>0.65</sub>Ga<sub>0.35</sub>N TJ above a 20 period 1 nm p-Al<sub>0.8</sub>Ga<sub>0.2</sub>N/ 1 nm p-Al<sub>0.2</sub>Ga<sub>0.8</sub>N short-period superlattice (SPSL). We observed a peak external quantum efficiency (EQE) of the λ = 294 nm TJ UV LED of 12.1%, and an EQE of 10.4% at 20 A/cm<sup>2</sup> and 9.1% at 35 A/cm<sup>2</sup>, with an excess voltage of 1.5 V at 1 A/cm<sup>2</sup>.
Authors
- Shuji Nakamura (ORCID: https://orcid.org/0000-0001-6334-2428)
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- James S. Speck (ORCID: https://orcid.org/0000-0002-8045-4090)
- Michael Wang (ORCID: https://orcid.org/0000-0001-9247-5473)
- Feng Wu (ORCID: https://orcid.org/0000-0002-9877-6426)
- Wenting Gong
Publication Details
- Journal
- Optics Express
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1364/oe.561096
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26