Growth behavior and optical properties of V-pits in GaN grown by a Na flux method
(a and c) Schematics of V-pit growth/annihilation & evolution in GaN via Na flux method. (b and d) Schematic illustration of V-pit morphological evolution & SEM/CL composite images of m -/ c -plane GaN.
Authors
- Zhiwei Si (ORCID: https://orcid.org/0000-0001-6789-991X)
- Ke Xu (ORCID: https://orcid.org/0000-0002-1835-7548)
- Xiaoming Dong (ORCID: https://orcid.org/0000-0003-2413-8541)
- Tao Zhang (ORCID: https://orcid.org/0000-0002-2219-960X)
- Xiaohui Peng (ORCID: https://orcid.org/0000-0002-7410-8538)
- Zongliang Liu
- Mengya Li (ORCID: https://orcid.org/0009-0008-3216-3054)
- Ning Tang (ORCID: https://orcid.org/0009-0002-9446-1344)
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- Suzhou Research Institute (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00095e
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 5.03