2D Reconfigurable Memory for Integrated Optical Sensing and Multifunctional Image Processing

Recently, the growing demand for data-centric applications has significantly accelerated progress to overcome the "memory wall" caused by the separation of image sensing, memory, and computing units. However, despite advancements in novel devices driving the development of the in-sensor computing paradigm, achieving seamless integration of optical sensing, storage, and image processing within a single device remains challenging. This study demonstrates an in-sensor computing architecture using a ferroelectric-defined reconfigurable α-In₂Se₃ phototransistor. The three polarization states of the device exhibit a linear and distinguishable photoresponse, with a maximum photoresponse current difference of 2.17 × 10^-6 A and a retention time exceeding 500 s. The nonvolatile weight and synaptic properties are programmed by external electrical stimulation, enabling 112 distinct conductance states with a nonlinearity of 0.12. Additionally, the device supports efficient optical writing, electrical erasing, optoelectronic logic, and decoding via combined optoelectronic control. In-sensor computation for image edge detection is simulated by embedding a nonvolatile Prewitt convolution kernel into a 3 × 3 device array. The integrated structure and array design highlight the strong potential of 2D ferroelectric semiconductors for in-sensor computing, providing a promising platform for next-generation multifunctional artificial vision systems.