A 6–18 GHz Low-Noise Amplifier with 19 dBm OP1dB and 2.6 ± 0.3 dB NF in 0.15 μm GaAs Process

A three-stage low-noise amplifier (LNA) operating over the 6–18 GHz frequency range is designed and implemented, featuring a flat noise figure (NF) and enhanced output 1 dB compression point (OP1dB). To improve linearity and minimize distortion, a power high-electron-mobility transistor (HEMT) is employed in the final stage. Additionally, resistive feedback and self-biasing techniques are integrated to extend the amplifier’s bandwidth. The proposed LNA exhibits a high and flat power gain of 25 ± 1 dB, with an input return loss of more than 10 dB. The measured NF remains stable at 2.6 ± 0.3 dB over the 6–18 GHz range. Furthermore, the OP1dB exceeds 19.5 dBm across the entire 3 dB gain bandwidth (BW). The circuit is fabricated using a 0.15 μm GaAs pHEMT process, occupying a compact chip area of 1.2 × 1.8 mm2.