Preliminary results of the thermal annealing for MOS dosimeters reutilization

The response of p-channel MOS dosimeters exposed to <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup>Co radiation and high-temperature annealing is studied. Real time threshold voltage evolution with accumulated dose shows a saturation that limits the lifespan of the sensors, making them disposable. Post-irradiation thermal treatment at high-temperature is able to anneal a large fraction of the radiation-induced trapped charge, restoring the sensor close to its condition prior to irradiation. A subsequent irradiation shows that sensitivity recovered and even increase with respect to that one during the first irradiation session at the same threshold voltage. An analytical model is employed to compare the responses during different irradiations and quantify the error in the dose estimation supposing that the sensitivity is fully recovered and invariant across the radiation-annealing cycles. First calculations are presented and future prospects are discussed<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>.