Design and characterization of a fast output amplifier for Silicon Photomultipliers

A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and characterized under dark and illuminated SiPM conditions. For the design presented in this work, a Gain of (20.0 ± 0.7) dB and a rise time of (768±10) ps were achieved for one amplifier stage and a Gain of (38.3±0.7) dB and rise time of (1155± 16) ps was achieved for two cascaded stages. In addition, the linearity of both topologies was verified and the measured Signal-to-Noise Ratio (SNR) was (21.9±0.4) dB and (18.8±0.5) dB for the one-stage and two-stage amplifiers, respectively. This design provides a cheap and scalable (weight and size) alternative to other fast output amplifiers that are used when operating SiPMs fast outputs. These characteristics make this design ideal for space applications.

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Published
2025-03-13
DOI
https://doi.org/10.1109/cae64243.2025.10962085
Primary Topic
Radiation Detection and Scintillator Technologies
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article
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article

Design and characterization of a fast output amplifier for Silicon Photomultipliers

F. Golmar, Felipe Soriano, Lucas Finazzi, G. A. Sanca
Radiation Detection and Scintillator Technologies
article

Design and characterization of a fast output amplifier for Silicon Photomultipliers

F. Golmar, Felipe Soriano, Lucas Finazzi, G. A. Sanca
article en

Abstract

A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and characterized under dark and illuminated SiPM conditions. For the design presented in this work, a Gain of (20.0 ± 0.7) dB and a rise time of (768±10) ps were achieved for one amplifier stage and a Gain of (38.3±0.7) dB and rise time of (1155± 16) ps was achieved for two cascaded stages. In addition, the linearity of both topologies was verified and the measured Signal-to-Noise Ratio (SNR) was (21.9±0.4) dB and (18.8±0.5) dB for the one-stage and two-stage amplifiers, respectively. This design provides a cheap and scalable (weight and size) alternative to other fast output amplifiers that are used when operating SiPMs fast outputs. These characteristics make this design ideal for space applications.

Consejo Nacional de Investigaciones Científicas y Técnicas (AR), National University of General San Martín (AR)
Affordable and clean energy
Openalex Percentile: Top 90%
Radiation Detection and Scintillator Technologies
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Design and characterization of a fast output amplifier for Silicon Photomultipliers — F. Golmar, Felipe Soriano, et al. · (2025) | TGRS Research Map | TGRS