Design and characterization of a fast output amplifier for Silicon Photomultipliers
A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and characterized under dark and illuminated SiPM conditions. For the design presented in this work, a Gain of (20.0 ± 0.7) dB and a rise time of (768±10) ps were achieved for one amplifier stage and a Gain of (38.3±0.7) dB and rise time of (1155± 16) ps was achieved for two cascaded stages. In addition, the linearity of both topologies was verified and the measured Signal-to-Noise Ratio (SNR) was (21.9±0.4) dB and (18.8±0.5) dB for the one-stage and two-stage amplifiers, respectively. This design provides a cheap and scalable (weight and size) alternative to other fast output amplifiers that are used when operating SiPMs fast outputs. These characteristics make this design ideal for space applications.
Authors
- F. Golmar (ORCID: https://orcid.org/0000-0002-4023-2899)
- Felipe Soriano (ORCID: https://orcid.org/0009-0003-4631-4881)
- Lucas Finazzi (ORCID: https://orcid.org/0009-0002-6201-3774)
- G. A. Sanca (ORCID: https://orcid.org/0000-0002-5571-5631)
Institutions
- Consejo Nacional de Investigaciones Científicas y Técnicas (AR)
- National University of General San Martín (AR)
Publication Details
- Published
- 2025-03-13
- DOI
- https://doi.org/10.1109/cae64243.2025.10962085
- Primary Topic
- Radiation Detection and Scintillator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00