Advancing Ag-Based PSCs: Reducing Interface Defects for Improved Solar Cell Performance

This work explores the effect of interface defect density on Ag-based perovskite solar cells (PSCs) with an eye toward the C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</inf>/AgCdF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/CuI layered structure. Key performance metrics of PSCs of V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf>, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf>, FF, and PCE are substantially influenced by interface defects. Increasing recombination of photogenerated charge carriers from high interface defect density significantly lowers V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> and J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf>. Rising internal resistance traps charge carriers, thereby reducing effective charge extraction and transport and hence affecting the fill factor. This reduces the PCE generally, which emphasizes how much negatively high interface defect density affects Ag-based PSC performance. Conversely, lowering the interface defect density improves charge carrier separation and collecting, hence increasing V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf>, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf>, FF, and PCE. Under study, passivation techniques, deposition processes, and material quality control are means to minimize interface defects density . This paper stresses the need of interface engineering in order to get PSCs with great efficiency. V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf>:- 1.28V, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf> :- 25.7 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, FF :- 84.0 % and PCE :- 27.5%. Future studies should concentrate on creating new materials and fabrication methods to enable much reduced interface defects density. By use of inventive passivation techniques and interface engineering methodologies, PSC performance would be considerably improved in line with Affordable and Clean Energy. Moreover, combining actual research with theoretical modelling helps one to better understand defect development and their impact, hence enabling the design of defect-tolerant materials and buildings. Solving interface defects density will help to meet Climate Action and Industry, Innovation, and Infrastructure, hence boosting Ag-based PSC performance and commercial viability.