NBTI measurement techniques assessment

Negative Bias Temperature Instability (NBTI) is a critical reliability concern in PMOS transistors, causing threshold voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf>) drift and performance degradation over time. This study evaluates and compares NBTI measurement methods highlighting their strengths and limitations.An impedance meter (LCR-meter) based method is pro-posed, which preserves stress conditions and eliminates recovery artifacts. Experimental results demonstrate that this strategy provides more accurate and high-resolution data, making it a cost-effective and reliable alternative to assess V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> drift in CMOS technologies.