Low-Level Signal Amplification using Quadruple MOSFET -BJT configuration
This paper presents a novel narrow-band amplifier model designed to amplify small signal inputs effectively. These signal amplifications are required in audio range signal excursions and in several robotic applications where high voltage and current gains are required. The design and analysis comprehensively examine small signals, providing detailed insights into the circuit's behavior and performance characteristics. The proposed amplifier employs a complex arrangement of two MOSFETs and two BJTs in a quadruple configuration. It aims to magnify input signals ranging from 1-10mV with remarkable performance metrics. The amplifier achieves a maximum voltage gain of 353.08 and a current gain of 2.309K within a frequency range of 144.47kHz.
Authors
- Anamala Oshmitha
- Kruti Acharya (ORCID: https://orcid.org/0009-0003-1266-9377)
- S. Soumya
- Tharikha Joseph
- B Anamika
Institutions
- Defence Institute of Advanced Technology (IN)
Publication Details
- Published
- 2024-12-12
- DOI
- https://doi.org/10.1109/aicecs63354.2024.10957691
- Primary Topic
- Analog and Mixed-Signal Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00