Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs
A new compact model and an extraction method for avalanche multiplication factor (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman>) at high currents are proposed. At a fixed collector–base (CB) voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>CB</roman></sub>), <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> first decreases with increasing emitter current (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>E</i></sub>) and then increases at higher currents when the Kirk effect occurs. Different forced-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>E</i></sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> extraction techniques are evaluated, including a new compact modeling-based <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> extraction technique that accurately captures the Early effect, the Kirk effect, and self-heating. The model is implemented in a development version of MEXTRAM and demonstrated experimentally to model both the current and bias dependence of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> and base current (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>B</i></sub>).
Authors
- Marnix Willemsen
- Huaiyuan Zhang (ORCID: https://orcid.org/0000-0002-9964-0897)
- A.J. Scholten (ORCID: https://orcid.org/0000-0003-1861-883X)
- Guofu Niu (ORCID: https://orcid.org/0000-0002-4102-2914)
Institutions
- NXP (Netherlands) (NL)
- Auburn University (US)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-04-15
- DOI
- https://doi.org/10.1109/ted.2025.3558114
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00