Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs

A new compact model and an extraction method for avalanche multiplication factor (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman>) at high currents are proposed. At a fixed collector–base (CB) voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>CB</roman></sub>), <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> first decreases with increasing emitter current (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>E</i></sub>) and then increases at higher currents when the Kirk effect occurs. Different forced-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>E</i></sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> extraction techniques are evaluated, including a new compact modeling-based <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> extraction technique that accurately captures the Early effect, the Kirk effect, and self-heating. The model is implemented in a development version of MEXTRAM and demonstrated experimentally to model both the current and bias dependence of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> and base current (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>B</i></sub>).

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-04-15
DOI
https://doi.org/10.1109/ted.2025.3558114
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs

Marnix Willemsen, Huaiyuan Zhang, A.J. Scholten, Guofu Niu
IEEE Transactions on Electron Devices
Radio Frequency Integrated Circuit Design
article

Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs

Marnix Willemsen, Huaiyuan Zhang, A.J. Scholten, Guofu Niu
article en

Abstract

A new compact model and an extraction method for avalanche multiplication factor (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman>) at high currents are proposed. At a fixed collector–base (CB) voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>CB</roman></sub>), <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> first decreases with increasing emitter current (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>E</i></sub>) and then increases at higher currents when the Kirk effect occurs. Different forced-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>E</i></sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> extraction techniques are evaluated, including a new compact modeling-based <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> extraction technique that accurately captures the Early effect, the Kirk effect, and self-heating. The model is implemented in a development version of MEXTRAM and demonstrated experimentally to model both the current and bias dependence of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i>-<roman xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</roman> and base current (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>B</i></sub>).

IEEE Transactions on Electron DevicesVol. 72(6)
NXP (Netherlands) (NL), Auburn University (US)
Climate action
Openalex Percentile: Top 94%
Radio Frequency Integrated Circuit Design
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