Layout Optimization of Dual-Directional SCR for Holding Voltage Equilibrium in ESD Applications

The reverse holding voltage of high-voltage (HV) dual-directional silicon-controlled rectifier (DDSCR) is usually degraded to a very low level due to the ubiquitous substrate guard ring. In this article, two symmetrical dual-finger layout configurations of DDSCR (DDSCR-DF1 and DDSCR-DF2) are proposed to restrain the degradation of negative holding voltage. By suppressing the parasitic current paths associated with the p-type guard ring (PGR) in all directions, experimental results indicate that the DDSCR-DF2 can effectively shield the substrate parasitic effects, thereby restoring the high holding voltage characteristic inherent in DDSCR kernel. Moreover, the dual-finger layout configuration presented here can be extended to various existing HV DDSCRs, thus providing a very useful layout optimization method for HV Electrostatic discharge (ESD) engineering.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-04-15
DOI
https://doi.org/10.1109/ted.2025.3558487
Citations
2
Primary Topic
Electrostatic Discharge in Electronics
Type
article
Field-Weighted Citation Impact
1.46
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article

Layout Optimization of Dual-Directional SCR for Holding Voltage Equilibrium in ESD Applications

Jiaqiang Zheng, Yimu Yang, Zihan Zheng, Fei Hou et al.
2 citations
IEEE Transactions on Electron Devices
Electrostatic Discharge in Electronics
1.46
article

Layout Optimization of Dual-Directional SCR for Holding Voltage Equilibrium in ESD Applications

Jiaqiang Zheng, Yimu Yang, Zihan Zheng, Fei Hou, Feibo Du, Ruibo Chen, Dongxing Gao, Xuyao Wang, Zhiwei Liu, Yi Liu, Xiaoyu Dong
article en
2 citations

Abstract

The reverse holding voltage of high-voltage (HV) dual-directional silicon-controlled rectifier (DDSCR) is usually degraded to a very low level due to the ubiquitous substrate guard ring. In this article, two symmetrical dual-finger layout configurations of DDSCR (DDSCR-DF1 and DDSCR-DF2) are proposed to restrain the degradation of negative holding voltage. By suppressing the parasitic current paths associated with the p-type guard ring (PGR) in all directions, experimental results indicate that the DDSCR-DF2 can effectively shield the substrate parasitic effects, thereby restoring the high holding voltage characteristic inherent in DDSCR kernel. Moreover, the dual-finger layout configuration presented here can be extended to various existing HV DDSCRs, thus providing a very useful layout optimization method for HV Electrostatic discharge (ESD) engineering.

IEEE Transactions on Electron DevicesVol. 72(6)
Xidian University (CN), University of Electronic Science and Technology of China (CN), Shenzhen University (CN), Shenzhen Technology University (CN)
Affordable and clean energy
Openalex Percentile: Top 18%
Electrostatic Discharge in Electronics
1.46
DOISourceOpenAlex
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