Ga-Free T2SL Infrared Detector Under Proton Irradiations: Identification of Dark Current Regimes

The purpose of this work is to study the effects of proton irradiation on the dark current of InAs/InAsSb type-II superlattice (T2SL) midwave infrared barrier photodetectors. 60 MeV proton irradiation with fluence up to 8x10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> H<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>/cm² was applied to the detector maintained at its operating temperature of 150 K. A degradation of dark current is observed under proton irradiation due to displacement damage dose effects. Thanks to TCAD simulations, we identify the different dark current regimes. At high reverse voltage, the device is dominated by Fowler-Nordheim (FN) current and trap assisted tunneling (TAT).