High Bandwidth and Low Driving Voltage Add-Drop Micro-Ring Modulator for Optical Interconnection I/O Chips

An ultra compact add-drop silicon micro-ring modulator with free spectrum range of 22.9 nm and modulation efficiency of 30.4 pm/V has been demonstrated. The electrooptical bandwidth of the modulator is greater than 90 GHz and can reach 110 GHz under the optical peaking effect. The modulator can achieve 128 Gb/s NRZ signal transmission at 1.36 V drive voltage with an extinction ratio of 3.28 dB, the corresponding power consumption is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula>4.93 fJ/bit. The calculated back-to-back bit error ratio (BER) of 128 Gb/s NRZ signal is 2.1×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> at -3 dBm receiving optical power lower than harddecision forward error correction (HD-FEC) assumption threshold and 1.5×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> at -5.5 dBm receiving optical power lower than soft-decision forward error correction (SD-FEC) assumption threshold.