High-Performance Thin Film Lithium Niobate Electro-Optic Modulator By Embedding Structure
Electro-optic modulators with low driving voltage and wide bandwidth are critical for advanced analog and digital communication systems. Improving the modulation efficiency of thin-film lithium niobate (TFLN) modulators is essential to reducing drive voltage and device length, thereby enabling compact chip integration and enhanced modulation bandwidth. This work introduces a novel TFLN modulator featuring an embedded dual capacitance-loaded traveling-wave electrode (EDC-TWE) to achieve superior electro-optic modulation efficiency and minimized optical loss. The fabricated modulator, with a 10-mm-long modulation region, achieves a half-wave voltage of 1.45 V and an electro-optic modulation bandwidth exceeding 40 GHz, demonstrating its potential for high-performance optical communication applications.
Authors
- Mingcan Cen (ORCID: https://orcid.org/0000-0003-3868-5159)
- Shuxiang Song (ORCID: https://orcid.org/0000-0003-0280-2640)
- Wanli Yang (ORCID: https://orcid.org/0000-0003-0666-8063)
- Yue Li (ORCID: https://orcid.org/0000-0002-1231-5830)
- Yihui Yin
- Hai-Sheng Li (ORCID: https://orcid.org/0000-0003-0393-2041)
- Hangyu Li (ORCID: https://orcid.org/0009-0001-9479-6446)
- Jiayu Yang (ORCID: https://orcid.org/0000-0001-5102-1002)
Institutions
- China Electronics Technology Group Corporation (CN)
- Guangxi Normal University (CN)
- Guilin University of Electronic Technology (CN)
Publication Details
- Journal
- IEEE Photonics Technology Letters
- Published
- 2025-04-15
- DOI
- https://doi.org/10.1109/lpt.2025.3561110
- Citations
- 2
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46