Modeling and simulation of transient dose rate effect on power distribution networks of system-in-package
This paper investigates the transient dose rate effect (TDRE) on the power distribution networks (PDNs) of the SZ0501 system-in-package (SiP). Previous experimental results have revealed significant differences in failure thresholds between the SZ0501 SiP and its prototype printed circuit board (PCB). To interpret these experimental findings, this study focuses on the PDNs of the SZ0501 SiP and develops optimized transient simulation models. Building on traditional Power Integrity (PI) and Signal Integrity (SI) co-simulation models, transient simulation models are developed by incorporating photocurrents into the PDNs. Transient simulations are conducted for both SiP and its prototype PCB under three conditions, including non-radiation, short- or long-pulse photocurrent injections, single- or multi-pulse photocurrent injections, especially considering the coupling effect in the multiple injection case. Simulation results indicate the power supply noise induced by transient photocurrents is obvious and considerably impacts the power supply stability. A comparison with the previous experimental data reveals that the prototype PCB possessing independent PDNs demonstrates greater stability under transient γ irradiation than the SiP with shared PDNs. This study underscores the importance of considering PDNs in the design of miniaturized systems to enhance the system reliability in transient radiation environments.
Authors
- Ning Li (ORCID: https://orcid.org/0000-0002-2428-0516)
- Dongwei Chen (ORCID: https://orcid.org/0000-0002-0471-6298)
- Fangpei Li
- Guohe Zhang
- Wenjun Li (ORCID: https://orcid.org/0000-0003-0691-1959)
- Yang Li (ORCID: https://orcid.org/0000-0002-6300-5445)
- Junlin Li (ORCID: https://orcid.org/0000-0002-9947-3988)
- Jinlei Wang (ORCID: https://orcid.org/0000-0002-5586-5349)
- Chaohui He (ORCID: https://orcid.org/0000-0002-7938-2907)
- Rong Lü (ORCID: https://orcid.org/0000-0002-7209-1824)
Institutions
- Northwest Institute of Nuclear Technology (CN)
- Gansu Great Wall Electrical and Electronics Engineering Research Institute (CN)
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- Nuclear Engineering and Technology
- Published
- 2025-04-15
- DOI
- https://doi.org/10.1016/j.net.2025.103652
- Citations
- 1
- Primary Topic
- VLSI and Analog Circuit Testing
- Type
- article
- Field-Weighted Citation Impact
- 2.27