Photo Sensing Properties of Heterojunction WO₃/p-Si and WS₂/p-Si Thin Films Synthesized by CBD

Photodetectors with a visible source of 35 mW cm −2 have been studied using WO 3 (Tungsten Oxide) and WS 2 (Tungsten Disulfide) thin films produced using the chemical bath deposition method. XRD results show the WO 3 and WS 2 thin films exhibit an orthorhombic phase and hexagonal phase with crystallite sizes of around 27.13 nm and 11.86 nm, respectively. A practical detector in this range is provided by the optical absorption spectra of WO 3 and WS 2 thin films, which display absorption in the 350–550 nm region. The computed band gap for WO 3 was around 1.93 eV and 2.70 eV, whereas for WS 2, it was 1.82 eV and 2.71 eV. To find the transport qualities, current-voltage measurements were made across the junction. Low sub-second response, recovery time as well as a low saturation current of 10 –11 A were achieved for the light source. Because of their linear dynamic range of about ∼14, these thin films show a promising feature for their use as broad-range photodetectors in the visible spectrum.