Boost in internal quantum efficiency of AlGaN-based deep ultraviolet multiple quantum wells by using multifaceted localization structures
Abstract This study demonstrates AlGaN multifaceted multiple quantum wells (MQWs) with a significantly enhanced localized emission, achieved through anisotropic growth control in migration-enhanced metal-organic chemical vapor deposition. By precisely regulating in-plane growth kinetics, pit-free semipolar sidewalls with tailored microstructures MQWs were obtained, leading to optimized emission properties. Scanning Auger Nanoprobe analysis revealed Ga-rich apex regions within the microfacets, which directly correlated with the enhanced localized emission observed in cathodoluminescence mapping. The multifacet structure exhibits remarkable enhancement in emission intensity through carrier redistribution. A quasi-internal quantum efficiency of 93.9% was achieved, making a significant milestone in the development of semipolar AlGaN MQWs.
Authors
- Ming Li (ORCID: https://orcid.org/0000-0003-0827-5976)
- Ge Gao (ORCID: https://orcid.org/0000-0001-9880-8080)
- Wei Guo (ORCID: https://orcid.org/0000-0002-6233-0529)
- Guangwei Yang (ORCID: https://orcid.org/0000-0002-1763-403X)
- Jichun Ye (ORCID: https://orcid.org/0000-0002-3901-7155)
- Li Chen (ORCID: https://orcid.org/0000-0002-8013-5508)
- Yirong Yao (ORCID: https://orcid.org/0000-0001-6580-3451)
Institutions
- Ningbo University (CN)
- Shanghai University (CN)
- Chinese Academy of Sciences (CN)
- Shanghai Research Institute of Materials (CN)
- Ningbo Institute of Industrial Technology (CN)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-04-15
- DOI
- https://doi.org/10.35848/1882-0786/adcd1f
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Ningbo
- National Key Research and Development Program of China