System-on-chip technology application on microwave imaging reflectometer

Abstract Millimeter-wave reflectometers are essential in magnetic fusion devices due to their capability to precisely measure plasma density profiles and shape. This study investigates the application of system-on-chip (SoC) technology in microwave imaging reflectometer, with a focus on designing and integrating receiver components. Key aspects of SoC chip development and packaging are discussed. The 90 nm Complementary Metal-Oxide-Semiconductor (CMOS) receiver circuit includes a radio frequency low-noise amplifier (LNA) with a balun, a double-balanced mixer, an intermediate frequency amplifier, and an local oscillator balun. The receiver chip has a compact footprint of 1.219 × 0.82 mm 2 , containing 14 transistors and consuming 89 mW of power. Post-simulation results for the high-gain LNA demonstrate a gain range of 25–28 dB with a noise figure of 7.5 dB across a three-stage structure. The system achieves a measurable power sensitivity down to 0.25 nanowatts while maintaining a highly compact form factor. The SoC system shows strong potential for future fusion reactor applications, offering robustness and scalability under challenging operational conditions. Chip and module testing results further highlight the system’s promise for high-performance, space-constrained environments.

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Publication Details

Journal
Plasma Physics and Controlled Fusion
Published
2025-04-15
DOI
https://doi.org/10.1088/1361-6587/adcd2d
Citations
5
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
Field-Weighted Citation Impact
3.65

Funders

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System-on-chip technology application on microwave imaging reflectometer

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Plasma Physics and Controlled Fusion
Advanced MEMS and NEMS Technologies
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article

System-on-chip technology application on microwave imaging reflectometer

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article en
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Abstract

Abstract Millimeter-wave reflectometers are essential in magnetic fusion devices due to their capability to precisely measure plasma density profiles and shape. This study investigates the application of system-on-chip (SoC) technology in microwave imaging reflectometer, with a focus on designing and integrating receiver components. Key aspects of SoC chip development and packaging are discussed. The 90 nm Complementary Metal-Oxide-Semiconductor (CMOS) receiver circuit includes a radio frequency low-noise amplifier (LNA) with a balun, a double-balanced mixer, an intermediate frequency amplifier, and an local oscillator balun. The receiver chip has a compact footprint of 1.219 × 0.82 mm 2 , containing 14 transistors and consuming 89 mW of power. Post-simulation results for the high-gain LNA demonstrate a gain range of 25–28 dB with a noise figure of 7.5 dB across a three-stage structure. The system achieves a measurable power sensitivity down to 0.25 nanowatts while maintaining a highly compact form factor. The SoC system shows strong potential for future fusion reactor applications, offering robustness and scalability under challenging operational conditions. Chip and module testing results further highlight the system’s promise for high-performance, space-constrained environments.

Plasma Physics and Controlled FusionVol. 67(5)
Chinese Academy of Sciences (CN), Institute of Plasma Physics (CN), University of California, Davis (US)
U.S. Department of Energy
Openalex Percentile: Top 7%
Advanced MEMS and NEMS Technologies
3.65
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