Thermoelectric Properties of Al–ZnO Oxide Thin Film

Abstract In this study, aluminum‐doped ZnO thin film is successfully deposited using the sol–gel method. Aluminum‐doped zinc oxide (AZO) thin film has been prepared by doping 3% aluminum in zinc oxide using the sol–gel method. The prepared Al–ZnO thin film has been successfully characterized using X‐ray diffraction (XRD), UV spectroscopy, and Hall measurement. Thermoelectric measurements are performed using an in‐house thermoelectric setup. The Seebeck coefficient of the AZO thin film is calculated to be 0.063 mV/K. The optical bandgap energy of the prepared AZO thin film is estimated to be 3.19 eV.