Full Electrical Manipulation of Perpendicular Magnetization in [111]-Orientated Pt/Co Heterostructure Enabled by Anisotropic Epitaxial Strain

The effective manipulation of perpendicular magnetization through spin-orbit torque (SOT) holds great promise for magnetic memory and spin-logic device. However, field-free SOT switching of perpendicular magnetization remains a challenge for conventional materials with high symmetry. This study elucidates a full electrical manipulation of the perpendicular magnetization in an epitaxial [111]-orientated Pt/Co heterostructure. A large anisotropic epitaxial strain induces a symmetry transition from the ideal <i>C</i><sub>3<i>v</i></sub> to <i>C</i><sub>1<i>v</i></sub>, attributed to the mismatch between [112] and [110] directions. The anisotropic strain also generates a noteworthy in-plane magnetization component along the [112] direction, further breaking magnetic symmetry. Notably, the high-temperature performance under 393 K highlights the robustness of strain-induced in-plane symmetry breaking. Furthermore, eight Boolean logic operations have been demonstrated within a single SOT device. This research presents a method for harnessing epitaxial strain to break in-plane symmetry, which may open a new avenue in practical SOT devices.

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Publication Details

Journal
Nano Letters
Published
2025-04-15
DOI
https://doi.org/10.1021/acs.nanolett.5c00699
Citations
1
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.25

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article

Full Electrical Manipulation of Perpendicular Magnetization in [111]-Orientated Pt/Co Heterostructure Enabled by Anisotropic Epitaxial Strain

Shouguo Wang, Tengyu Guo, Hongxin Yang, Baoshan Cui et al.
1 citations
Nano Letters
Magnetic properties of thin films
1.25
article

Full Electrical Manipulation of Perpendicular Magnetization in [111]-Orientated Pt/Co Heterostructure Enabled by Anisotropic Epitaxial Strain

Shouguo Wang, Tengyu Guo, Hongxin Yang, Baoshan Cui, Congli He, Hao Wu, Haiming Xu, Yunchi Zhao, Jijun Yun, Guoqiang Yu, Li Xi, Lili Luo, Qirui Cui, Xiaowei Lv, Renchao Che, Zengtai Zhu, Yalu Zuo
article en
1 citations

Abstract

The effective manipulation of perpendicular magnetization through spin-orbit torque (SOT) holds great promise for magnetic memory and spin-logic device. However, field-free SOT switching of perpendicular magnetization remains a challenge for conventional materials with high symmetry. This study elucidates a full electrical manipulation of the perpendicular magnetization in an epitaxial [111]-orientated Pt/Co heterostructure. A large anisotropic epitaxial strain induces a symmetry transition from the ideal <i>C</i><sub>3<i>v</i></sub> to <i>C</i><sub>1<i>v</i></sub>, attributed to the mismatch between [112] and [110] directions. The anisotropic strain also generates a noteworthy in-plane magnetization component along the [112] direction, further breaking magnetic symmetry. Notably, the high-temperature performance under 393 K highlights the robustness of strain-induced in-plane symmetry breaking. Furthermore, eight Boolean logic operations have been demonstrated within a single SOT device. This research presents a method for harnessing epitaxial strain to break in-plane symmetry, which may open a new avenue in practical SOT devices.

Nano LettersVol. 25(16)
Anhui University (CN), Northwestern Polytechnical University (CN), Chinese Academy of Sciences (CN), Fudan University (CN), Beijing Normal University (CN), Joint Laboratory for Extreme Conditions Matter Properties (CN), Songshan Lake Materials Laboratory (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Collaborative Innovation Center of Quantum Matter (CN), AlbaNova (SE), National Laboratory for Superconductivity (CN), Zhejiang University (CN), Lanzhou University (CN), KTH Royal Institute of Technology (SE)
Lanzhou University, National Natural Science Foundation of China, Natural Science Foundation of Gansu Province, Higher Education Discipline Innovation Project, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 22%
Magnetic properties of thin films
1.25
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