STUDY OF ELECTRICAL CONDUCTIVITY AND DIELECTRIC PROPERTIES OF TlGa1-xInSe2 SOLID SOLUTIONS IRRADIATED WITH γ-QUANTUMS

The electrical and dielectric properties of TlGa1-xInSe2 solids in a large temperature and frequency range, as well as the effect of γ-rays at a dose of 75 Mrad on them, were explained by means of possible mechanisms. Based on the results of the study of the temperature dependence of the electrical conductivity of TlGa1-xInSe2 (x=0; 0.1; 0.2) solid solutions before and after irradiation with different doses in the temperature range of 100…300 K, the temperature and frequency intervals of the presence of jump conductivity were determined. During the study of the temperature dependence of the electrical conductivity of solid solutions, the existence of two parts in the change of the specific conductivity was shown. In the studied solid solution samples, there is a sharp increase in the dielectric constant at a certain critical temperature. Above room temperature, the experimental points of ln(ε) are characterized by a straight line as a function of 1/T, which is a characteristic property of ionic conductivity.