Structural Simulation and Optimization of Z-Shaped Silicon Carbide Printed Circuit Heat Exchanger

To improve the heat transfer and flow performance of multichannel Z-shaped silicon carbide printed circuit heat exchanger (PCHE) as a high-temperature recuperator, the response surface method and ANSYS software were used to simulate and optimize the structural parameters of Z-shaped silicon carbide PCHE, with the Nusselt number and Fanning friction coefficient as the response values, and the channel bending angle, channel thickness, channel diameter, and channel spacing as the influencing parameters in this paper. The results showed that the channel bending angle has the most significant effect on the Fanning friction coefficient, and the channel diameter has the most significant effect on the Nusselt number. The optimal parameters for the Z-shaped silicon carbide PCHE as a high-temperature recuperator are as follows: channel bending angle [Formula: see text], channel diameter 1.996 mm, channel thickness 4.028 mm, and channel spacing 0.535 mm. The results above can provide theoretical guidance for the industrial application of Z-shaped silicon carbide PCHE in supercritical carbon dioxide Brayton cycle energy storage and power generation.