A non-stationary model of mass transfer in a self-consistent electrical field for determining the influence of temperature on electrophysical properties of metal oxide memristors
A non-stationary one-dimensional physical and mathematical model of mass transfer of oxygen vacancies and trapped electrons in a self-consistent electric field is presented, this model allows to determine the influence of temperature on the electrophysical properties of metal oxide memristors.
Authors
- Alexander N. Busygin (ORCID: https://orcid.org/0000-0002-3439-8067)
- Nikita А. Shulaev
- Alexander D. Pisarev (ORCID: https://orcid.org/0000-0002-5602-3880)
- S. Yu. Udovichenko (ORCID: https://orcid.org/0000-0003-3583-7081)
- Abdullah Haidar Abdo Ebrahim
- Baurzhan H. Gabdulin
Institutions
- University of Tyumen (RU)
Publication Details
- Journal
- Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
- Published
- 2024-12-28
- DOI
- https://doi.org/10.17073/1609-3577j.met202411.636
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00