Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared

We report a detailed characterization of the wavelength dependency of two-photon absorption coefficient β and Kerr nonlinearity n2 in aluminum nitride (AlN) single crystal over a spectral range from 350 to 1030 nm (0.19 < Ephoto/Eg < 0.57). Femtosecond Z-scan results show that the dispersion of β compares favorably with the theoretical prediction at wavelengths shorter than 400 nm (half of bandgap Eg). However, the nonlinear refractive index n2 demonstrated a substantial deviation from theoretical calculations in the 350–450 nm regime, which is correlated with the sub-bandgap absorption band observed in AlN single crystal. The effects of trapped carrier-induced absorption and refraction were determined by femtosecond pump–probe measurements, which could be attributed to the transition from valence band maximum to mid-gap defect states in AlN. Our results provide guidance for developing AlN-based nonlinear integrated photonic devices in the UV–visible spectral range.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-14
DOI
https://doi.org/10.1063/5.0260338
Citations
3
Primary Topic
Nonlinear Optical Materials Studies
Type
article
Field-Weighted Citation Impact
2.02

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article

Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared

Zenghua Wang, Wenfa Zhou, Xifeng Yang, Zhongguo Li et al.
3 citations
Applied Physics Letters
Nonlinear Optical Materials Studies
2.02
article

Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared

Zenghua Wang, Wenfa Zhou, Xifeng Yang, Zhongguo Li, Yinglin Song, Xuekun Hong, Datang Xu
article en
3 citations

Abstract

We report a detailed characterization of the wavelength dependency of two-photon absorption coefficient β and Kerr nonlinearity n2 in aluminum nitride (AlN) single crystal over a spectral range from 350 to 1030 nm (0.19 < Ephoto/Eg < 0.57). Femtosecond Z-scan results show that the dispersion of β compares favorably with the theoretical prediction at wavelengths shorter than 400 nm (half of bandgap Eg). However, the nonlinear refractive index n2 demonstrated a substantial deviation from theoretical calculations in the 350–450 nm regime, which is correlated with the sub-bandgap absorption band observed in AlN single crystal. The effects of trapped carrier-induced absorption and refraction were determined by femtosecond pump–probe measurements, which could be attributed to the transition from valence band maximum to mid-gap defect states in AlN. Our results provide guidance for developing AlN-based nonlinear integrated photonic devices in the UV–visible spectral range.

Applied Physics LettersVol. 126(15)
Harbin Institute of Technology (CN), Suzhou University of Technology (CN), ETC International (NL)
National Natural Science Foundation of China, Qinglan Project of Jiangsu Province of China
Openalex Percentile: Top 15%
Nonlinear Optical Materials Studies
2.02
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Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared — Zenghua Wang, Wenfa Zhou, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS