Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2 nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10 nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.

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Institutions

Publication Details

Journal
Applied Physics Letters
Published
2025-04-14
DOI
https://doi.org/10.1063/5.0254042
Citations
3
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
3.74

Funders

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article

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Junta Igarashi, G. Malinowski, J. Hohlfeld, Jon Gorchon et al.
3 citations
Applied Physics Letters
Magnetic properties of thin films
3.74
article

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Junta Igarashi, G. Malinowski, J. Hohlfeld, Jon Gorchon, Jun‐Xiao Lin, S. Mangin, D. Lacour, M. Hehn, S. Geiskopf
article en
3 citations

Abstract

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2 nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10 nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.

Applied Physics LettersVol. 126(15)
Institut Jean Lamour (FR), National Institute of Advanced Industrial Science and Technology (JP), Université de Lorraine (FR)
Japan Society for the Promotion of Science London, European Cooperation in Science and Technology, Agence Nationale de la Recherche, Japan Society for the Promotion of Science
Openalex Percentile: Top 8%
Magnetic properties of thin films
3.74
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Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction — Junta Igarashi, G. Malinowski, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS