Low-Power and High-Performance Double-Node-Upset-Tolerant Latch Using Input-Splitting C-Element

Data accuracy is critical for sensor systems. As essential components of digital circuits within sensor systems, nanoscale CMOS latches are particularly susceptible to single-node upsets (SNUs) and double-node upsets (DNUs), which can lead to data errors. In this paper, a highly robust Double-Node-Upset-Tolerant Latch-Based on Input Splitting C-Elements (DNUISC) is proposed. The DNUISC latch is designed by interconnecting three sets of input-splitting C-elements to form a feedback loop, and it incorporates clock gating and fast-path techniques to minimize power consumption and delay. Simulations are conducted using the 28 nm process in HSPICE. The simulation results show that the DNUISC can self-recover from any single-node upset and is tolerant of any double-node upset. Compared with existing hardened latches, the DNUISC achieves a 55.21% reduction in area-power-delay product (APDP). Furthermore, the proposed DNUIS demonstrates high reliability and low sensitivity under varying process, voltage, and temperature conditions.

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Publication Details

Journal
Sensors
Published
2025-04-12
DOI
https://doi.org/10.3390/s25082435
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
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article

Low-Power and High-Performance Double-Node-Upset-Tolerant Latch Using Input-Splitting C-Element

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Radiation Effects in Electronics
article

Low-Power and High-Performance Double-Node-Upset-Tolerant Latch Using Input-Splitting C-Element

Pengjia Qi, Yanyun Dai, Rong Kong, Bo He, Qi Chen
article en

Abstract

Data accuracy is critical for sensor systems. As essential components of digital circuits within sensor systems, nanoscale CMOS latches are particularly susceptible to single-node upsets (SNUs) and double-node upsets (DNUs), which can lead to data errors. In this paper, a highly robust Double-Node-Upset-Tolerant Latch-Based on Input Splitting C-Elements (DNUISC) is proposed. The DNUISC latch is designed by interconnecting three sets of input-splitting C-elements to form a feedback loop, and it incorporates clock gating and fast-path techniques to minimize power consumption and delay. Simulations are conducted using the 28 nm process in HSPICE. The simulation results show that the DNUISC can self-recover from any single-node upset and is tolerant of any double-node upset. Compared with existing hardened latches, the DNUISC achieves a 55.21% reduction in area-power-delay product (APDP). Furthermore, the proposed DNUIS demonstrates high reliability and low sensitivity under varying process, voltage, and temperature conditions.

SensorsVol. 25(8)
Zhejiang Sci-Tech University (CN)
National Natural Science Foundation of China, Basic Public Welfare Research Program of Zhejiang Province
Affordable and clean energy
Openalex Percentile: Top 94%
Radiation Effects in Electronics
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