Low-Power and High-Performance Double-Node-Upset-Tolerant Latch Using Input-Splitting C-Element
Data accuracy is critical for sensor systems. As essential components of digital circuits within sensor systems, nanoscale CMOS latches are particularly susceptible to single-node upsets (SNUs) and double-node upsets (DNUs), which can lead to data errors. In this paper, a highly robust Double-Node-Upset-Tolerant Latch-Based on Input Splitting C-Elements (DNUISC) is proposed. The DNUISC latch is designed by interconnecting three sets of input-splitting C-elements to form a feedback loop, and it incorporates clock gating and fast-path techniques to minimize power consumption and delay. Simulations are conducted using the 28 nm process in HSPICE. The simulation results show that the DNUISC can self-recover from any single-node upset and is tolerant of any double-node upset. Compared with existing hardened latches, the DNUISC achieves a 55.21% reduction in area-power-delay product (APDP). Furthermore, the proposed DNUIS demonstrates high reliability and low sensitivity under varying process, voltage, and temperature conditions.
Authors
- Pengjia Qi (ORCID: https://orcid.org/0009-0000-6595-6909)
- Yanyun Dai (ORCID: https://orcid.org/0000-0001-8466-2404)
- Rong Kong (ORCID: https://orcid.org/0000-0002-2685-9943)
- Bo He (ORCID: https://orcid.org/0000-0003-3888-6102)
- Qi Chen
Institutions
- Zhejiang Sci-Tech University (CN)
Publication Details
- Journal
- Sensors
- Published
- 2025-04-12
- DOI
- https://doi.org/10.3390/s25082435
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Basic Public Welfare Research Program of Zhejiang Province