Alkali metal/mercury dual-metal sulfides as infrared nonlinear optical materials with high laser-induced damage thresholds

Two new mercury-based sulfides, Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> and Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub>, were successfully synthesized by the high-temperature solid-state reaction, and they are isostructural to crystallize in the non-centrosymmetric orthorhombic space group <i>P</i>2<sub>1</sub>2<sub>1</sub>2<sub>1</sub>. The results of the experiments indicate that Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> has a large band gap of 3.26 eV, a second harmonic generation (SHG) response of 0.17 × AgGaS<sub>2</sub> (AGS) at the particle size of 90-125 μm, and non-phase-matchable (NPM) properties. Additionally, Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> exhibits a SHG response of 0.13 × AGS (particle size of 90-125 μm) as well as type-I phase-matchable (PM) performance at 2090 nm. Moreover, Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> and Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> exhibit high laser-induced damage thresholds of 3.1 and 2.7 × AGS, respectively. Theoretical calculations reveal that Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> and Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> are two direct semiconductors with the calculated band gap of 2.32 and 2.15 eV and the synergistic action of [HgS<sub>4</sub>] and [GeS<sub>4</sub>] units realizes their SHG response.

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Publication Details

Journal
Dalton Transactions
Published
2025-01-01
DOI
https://doi.org/10.1039/d5dt00180c
Citations
1
Primary Topic
Crystal Structures and Properties
Type
article
Field-Weighted Citation Impact
0.43
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article

Alkali metal/mercury dual-metal sulfides as infrared nonlinear optical materials with high laser-induced damage thresholds

Pifu Gong, Zheshuai Lin, Jiyong Yao, Chunxiao Li et al.
1 citations
Dalton Transactions
Crystal Structures and Properties
0.43
article

Alkali metal/mercury dual-metal sulfides as infrared nonlinear optical materials with high laser-induced damage thresholds

Pifu Gong, Zheshuai Lin, Jiyong Yao, Chunxiao Li, Bohui Xu, Guili Wang
article en
1 citations

Abstract

Two new mercury-based sulfides, Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> and Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub>, were successfully synthesized by the high-temperature solid-state reaction, and they are isostructural to crystallize in the non-centrosymmetric orthorhombic space group <i>P</i>2<sub>1</sub>2<sub>1</sub>2<sub>1</sub>. The results of the experiments indicate that Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> has a large band gap of 3.26 eV, a second harmonic generation (SHG) response of 0.17 × AgGaS<sub>2</sub> (AGS) at the particle size of 90-125 μm, and non-phase-matchable (NPM) properties. Additionally, Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> exhibits a SHG response of 0.13 × AGS (particle size of 90-125 μm) as well as type-I phase-matchable (PM) performance at 2090 nm. Moreover, Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> and Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> exhibit high laser-induced damage thresholds of 3.1 and 2.7 × AGS, respectively. Theoretical calculations reveal that Rb<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> and Cs<sub>2</sub>HgGe<sub>3</sub>S<sub>8</sub> are two direct semiconductors with the calculated band gap of 2.32 and 2.15 eV and the synergistic action of [HgS<sub>4</sub>] and [GeS<sub>4</sub>] units realizes their SHG response.

Dalton TransactionsVol. 54(18)
Chinese Academy of Sciences (CN), Technical Institute of Physics and Chemistry (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 43%
Crystal Structures and Properties
0.43
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