Fabrication of barium-strontium niobate thin films on silicon substrates of various orientations

Barium strontium niobate thin films were fabricated on silicon substrates of (001), (110), and (111) orientations by the RF cathode sputtering method. The thickness of all films was equal to each other and was 200 nm. In addition, all films were polycrystalline textured. In this case, the unit cells of all films had almost no deformation compared to the bulk material. The chemical composition of the films was studied by the energy-dispersive analysis method, it was found that the composition of all films corresponds to the stoichiometric composition of the target. The morphology of the film surface was studied by atomic force microscopy methods, according to the results it was found that the surface of the films is represented by growth blocks of various shapes, and at the same time the surface roughness was low. It is noted that the orientation of the substrate did not affect either the block sizes or the surface roughness. Measurements of the capacitancevoltage characteristics of the obtained films showed that, regardless of the orientation of the substrate, the films have practically identical dielectric characteristics.