Vanadium Doped Magnetic MoS ₂ Monolayers of Improved Electrical Conductivity as Spin‐Orbit Torque Layer

Abstract 2D transition metal di‐chalcogenide layers with high electrical conductivity and spin‐orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, vanadium (V) substitutionally doped monolayer MoS 2 (VMS) demonstrated as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ≈3 × 10 −1 S m −1 of MoS 2 to ≈10 5 S m −1 upon doping to the level of 9 at.%. Ferromagnetic resonance (FMR) based spin‐pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin‐torque FMR measurements demonstrate the charge‐to‐spin conversion at the Py/VMS interface suggesting the latter's potential as a spin‐orbit torque layer in 2D spintronic devices.