Exploring the photoswitching behavior of electrophoretically deposited (EPD) HfXSn1-XSe2 (X = 0.05, 0.1) thin films-based PEC-PD

Alloy engineering is one of the best techniques for synthesising transition metal dichalcogenide materials (TMDCs) to cultivate advanced optoelectronic devices . In the present study, we discussed the effect of Hf on pristine SnSe 2 based on structural and photosensing properties. The bulk material of Hf X Sn 1-X Se 2 (X = 0.05, 0.1) exfoliate using the liquid phase exfoliation method. Thin films of Hf X Sn 1-X Se 2 (X = 0.05, 0.1) are grown using the electrophoretic deposition (EPD) technique. The elemental confirmation of these materials is done by energy dispersive analysis of X-ray (EDAX). The hexagonal crystal structure of the grown thin film is confirmed by X-ray diffraction (XRD) analysis. The photosensing properties of EPD films are studied by fabricating photoelectrochemical cell photodetector (PEC-PD) using the electrolysis method. The photosensing properties are analyzed using poly and mono-chromatic light under zero bias at room temperature. The remarkable photocurrent of both PEC-PD suggests the use of this material in optoelectronic fields is one of the good choices. Overall results indicate excellent performance of given materials as PEC-PD. • The thin film of Hf X Sn 1-X Se 2 (X = 0.05, 0.1) PEC-PD was fabricated by electrophoretically deposited (EPD) technique. • The morphology of the deposited film was investigated by SEM and AFM. The hexagonal structure is revealed by XRD analysis. • The photo-switching properties of PEC-PD confirmed the maximum photocurrent of 3915.98 nA for 10 % doped Hf material. • The fast switching I-T characteristics are confirmed by measuring rise time and decay time which is less than 1 s. • The fast-switching property and high photocurrent of these materials indicate optimum photo-sensing material for devices.