CASTEP investigation of FeS and FeSe: Structural, electronic, optical, and mechanical properties using the HSE03 hybrid

This study analyzed the structural, electrical, optical, and mechanical characteristics of iron chalcogenides (FeS and FeSe). Theoretical investigations were conducted using first-principles calculations using density functional theory. According to our band structure plot, the compounds were identified as narrow-bandgap semiconductors. The respective bandgaps of FeS and FeSe are 0.497 eV [0.545 eV for generalized gradient approximation (GGA)] and 0.425 eV (0.465 eV for GGA). The dielectric function was calculated using the Ambroxol–Sofos and Kramers–Kronig theory for optical properties. Meanwhile, the mechanical properties were evaluated with a second-order stress–strain relationship. In this study, the compounds were brittle and ionic–covalent. Young’s, shear, and bulk moduli were impacted when the S atom was replaced with Se in the iron-based compounds. In addition, the elastic constants Cij decreased. These numerical findings suggest potential applications for iron-based compounds in UV absorbers and optoelectronic devices.

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Publication Details

Journal
AIP Advances
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0258963
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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article

CASTEP investigation of FeS and FeSe: Structural, electronic, optical, and mechanical properties using the HSE03 hybrid

Geoffrey Tse
3 citations
AIP Advances
Chalcogenide Semiconductor Thin Films
2.19
article

CASTEP investigation of FeS and FeSe: Structural, electronic, optical, and mechanical properties using the HSE03 hybrid

Geoffrey Tse
article en
3 citations

Abstract

This study analyzed the structural, electrical, optical, and mechanical characteristics of iron chalcogenides (FeS and FeSe). Theoretical investigations were conducted using first-principles calculations using density functional theory. According to our band structure plot, the compounds were identified as narrow-bandgap semiconductors. The respective bandgaps of FeS and FeSe are 0.497 eV [0.545 eV for generalized gradient approximation (GGA)] and 0.425 eV (0.465 eV for GGA). The dielectric function was calculated using the Ambroxol–Sofos and Kramers–Kronig theory for optical properties. Meanwhile, the mechanical properties were evaluated with a second-order stress–strain relationship. In this study, the compounds were brittle and ionic–covalent. Young’s, shear, and bulk moduli were impacted when the S atom was replaced with Se in the iron-based compounds. In addition, the elastic constants Cij decreased. These numerical findings suggest potential applications for iron-based compounds in UV absorbers and optoelectronic devices.

AIP AdvancesVol. 15(4)
Southern University of Science and Technology (CN)
Openalex Percentile: Top 13%
Chalcogenide Semiconductor Thin Films
2.19
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