Physical properties of Fe-doped CdS quantum dots: single dot rectifying diode application
Fe-doped CdS single dot rectifying diodes were characterized using scanning tunneling microscope (STM) at ambient atmosphere. Fe doping reduced the threshold voltage for a single dot electronic device with minimal electrical power loss.
Authors
- S. N. Jha
- Ravi Kumar (ORCID: https://orcid.org/0000-0002-5048-7860)
- Bhola Nath Pal (ORCID: https://orcid.org/0000-0001-7512-3441)
- Piyali Maity (ORCID: https://orcid.org/0000-0001-6522-8442)
- Sandip Chatterjee (ORCID: https://orcid.org/0000-0002-6392-0598)
- D. Bhattacharyya (ORCID: https://orcid.org/0000-0002-1657-1858)
- Anup K. Ghosh
Institutions
- Bhabha Atomic Research Centre (IN)
- Banaras Hindu University (IN)
Publication Details
- Journal
- RSC Applied Interfaces
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4lf00337c
- Citations
- 4
- Primary Topic
- Quantum Dots Synthesis And Properties
- Type
- article
- Field-Weighted Citation Impact
- 2.07
Funders
- Department of Science and Technology, Ministry of Science and Technology, India
- Science and Engineering Research Board