Synthesis and characterizations of Cu2BaSnS4 nanoparticles via solvothermal route

In present work, Cu2BaSnS4(CBTS) nanoparticles are reported solvothermally synthesized. The formation of single-phase trigonal structure of CBTS nanoparticles is confirmed by XRD and Raman spectroscopic analysis. SEM studies reveal that CBTS exhibits flower shaped structure self-assembling by nanosheets with uniform average thickness 30nm. CBTS materials show abroad absorption in the complete visible range, providing a band-gap value of 1.58eV, indicating potential applications in photocvoltaics. The excellent MB degradation efficiency of 93% under visible light within 100min is achieved, suggesting CBTS is a potential material for effective solar light photocatalytic application. Meanwhile, electrical properties are measured up to 675K, the value of Seebeck coefficient of CBTS material can reach to 111.42μV•K-1 , meanwhile the value of electrical conductivity is 18.24S·m-1 , indicating its potential for thermoelectric application.

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Publication Details

Journal
Chalcogenide Letters
Published
2025-04-14
DOI
https://doi.org/10.15251/cl.2025.223.255
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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article

Synthesis and characterizations of Cu2BaSnS4 nanoparticles via solvothermal route

Gwanghui Ha, R. Patrick Xian, Yifan Wang, Zhong Chen
3 citations
Chalcogenide Letters
Chalcogenide Semiconductor Thin Films
2.19
article

Synthesis and characterizations of Cu2BaSnS4 nanoparticles via solvothermal route

Gwanghui Ha, R. Patrick Xian, Yifan Wang, Zhong Chen
article en
3 citations

Abstract

In present work, Cu2BaSnS4(CBTS) nanoparticles are reported solvothermally synthesized. The formation of single-phase trigonal structure of CBTS nanoparticles is confirmed by XRD and Raman spectroscopic analysis. SEM studies reveal that CBTS exhibits flower shaped structure self-assembling by nanosheets with uniform average thickness 30nm. CBTS materials show abroad absorption in the complete visible range, providing a band-gap value of 1.58eV, indicating potential applications in photocvoltaics. The excellent MB degradation efficiency of 93% under visible light within 100min is achieved, suggesting CBTS is a potential material for effective solar light photocatalytic application. Meanwhile, electrical properties are measured up to 675K, the value of Seebeck coefficient of CBTS material can reach to 111.42μV•K-1 , meanwhile the value of electrical conductivity is 18.24S·m-1 , indicating its potential for thermoelectric application.

Chalcogenide LettersVol. 22(3)
Yancheng Institute of Technology (CN)
Openalex Percentile: Top 13%
Chalcogenide Semiconductor Thin Films
2.19
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