High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of the active region of the InAs QD laser device. The co-doping scheme enables the demonstration of InAs QD laser device with only seven layers of InAs QDs in the active region for high temperature operation, which is compared with a conventional undoped InAs QD laser device. A Fabry-Pérot laser device with as-cleaved facets and a co-doped InAs QD active region enables ultra-high temperature pulsed-biased O-band laser operation up to 202°C, compared to 180°C for conventional undoped InAs QD laser, and without requiring high-reflective facet coatings.

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Publication Details

Journal
IEEE photonics journal
Published
2025-04-14
DOI
https://doi.org/10.1109/jphot.2025.3560443
Citations
6
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
4.38

Funders

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High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

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IEEE photonics journal
Semiconductor Lasers and Optical Devices
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article

High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

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article en
6 citations

Abstract

We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of the active region of the InAs QD laser device. The co-doping scheme enables the demonstration of InAs QD laser device with only seven layers of InAs QDs in the active region for high temperature operation, which is compared with a conventional undoped InAs QD laser device. A Fabry-Pérot laser device with as-cleaved facets and a co-doped InAs QD active region enables ultra-high temperature pulsed-biased O-band laser operation up to 202°C, compared to 180°C for conventional undoped InAs QD laser, and without requiring high-reflective facet coatings.

IEEE photonics journalVol. 17(3)
University College London (GB), Cardiff University (GB)
Cardiff University, Engineering and Physical Sciences Research Council
Affordable and clean energy
Openalex Percentile: Top 6%
Semiconductor Lasers and Optical Devices
4.38
DOIOpen Access PDFOpenAlex
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