Difference Between SET and SEU Thresholds Measured by SPA Laser Testing in a 16-nm FinFET Programmable SoC
We investigate the occurrence of SET in the programmable logic of a 16-nm FinFET SoC using SPA laser testing. Results indicate sensitive locations decorrelated from CRAM errors and a significant difference between SET and SEU thresholds. Correlation of these observations with available heavy ion results on the same technology is discussed. TCAD simulation results of SET in a single inverter are presented. Implications for SET rate prediction are discussed.
Authors
- V. Pouget (ORCID: https://orcid.org/0000-0001-6126-6708)
- Marine Ruffenach (ORCID: https://orcid.org/0000-0001-8772-7330)
- Julien Mekki (ORCID: https://orcid.org/0000-0002-5801-5921)
- Florence Malou
- Matthieu Fongral (ORCID: https://orcid.org/0009-0002-1677-3676)
- Frédéric Saigné
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Montpellier (FR)
- Centre National d'Études Spatiales (FR)
- Institut d'Électronique et des Systèmes (FR)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/tns.2025.3559206
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00