28-GHz Body-Effect-Controlled CMOS Bidirectional Active Mixer

This work presents a 28-GHz complementary metal-oxide-semiconductor (CMOS) bidirectional mixer for frequency conversion in both receiver (RX) (forward) and transmitter (TX) (backward) modes. The design utilizes the symmetric source-drain structure of CMOS devices, with a supply-switching technique for bidirectional operation. Body-effect control and gain-boosting techniques are also applied to enhance performance in both modes. The proposed design was fabricated using the 65-nm CMOS process and primarily characterized in the 28-GHz band.