Lightly Se-Doped Monolayer MoS<sub>2</sub> Grown by Chemical Vapor Deposition Using SeS<sub>2</sub> Precursor
Transition metal dichalcogenide (TMDC)-based two-dimensional semiconductors are promising materials for next-generation electronic devices. However, challenges such as optimizing the carrier mobility, on/off current ratio, threshold voltage, and minimization of hysteresis remain. Herein, we report lightly Se-doped monolayer MoS<sub>2</sub> via chemical vapor deposition (CVD) using selenium disulfide (SeS<sub>2</sub>) as a chalcogen source. Interestingly, doping with 5.5% Se (MoS<sub>1.89</sub>Se<sub>0.11</sub>) enhanced the electron mobility compared to conventional MoS<sub>2</sub>, contrary to the typical trend of increased effective mass with substitutional doping. Additionally, bandgap tunability was achieved by controlling the Se content via temperature control of SeS<sub>2</sub>. This approach offers a pathway for tailoring the properties of TMDCs for advanced applications.
Authors
- Hyun Ho Kim (ORCID: https://orcid.org/0000-0003-1004-814X)
- Jisang Hong (ORCID: https://orcid.org/0000-0002-5895-8700)
- Abd Ullah
- Sung Jin An (ORCID: https://orcid.org/0000-0002-5114-1933)
- Ji Hwan Kim (ORCID: https://orcid.org/0000-0002-4598-8855)
- Seon Yeon Choi
- Ho Min Kang
- Si Heon Lim
- Eun Bee Ko
Institutions
- Kumoh National Institute of Technology (KR)
- Pukyong National University (KR)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1021/acsami.5c02255
- Citations
- 3
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.55
Funders
- National Research Foundation of Korea
- Korea Evaluation Institute of Industrial Technology