Investigation of nonlinear optical properties in GaN nanoparticles and nanosheets spanning deep ultraviolet to near-infrared wavelengths

The nonlinear optical behavior of the wide bandgap semiconductor gallium nitride (GaN), manifested in both its nanoparticle and nanosheet forms, has garnered significant attention.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc00218d
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.77
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article

Investigation of nonlinear optical properties in GaN nanoparticles and nanosheets spanning deep ultraviolet to near-infrared wavelengths

Jinghua Sun, Hongkai Ren, Boyao Li, Guowei Liu et al.
3 citations
Journal of Materials Chemistry C
GaN-based semiconductor devices and materials
3.77
article

Investigation of nonlinear optical properties in GaN nanoparticles and nanosheets spanning deep ultraviolet to near-infrared wavelengths

Jinghua Sun, Hongkai Ren, Boyao Li, Guowei Liu, Xuezhi Zhao, Zhixin Wu, Junjie Huang
article en
3 citations

Abstract

The nonlinear optical behavior of the wide bandgap semiconductor gallium nitride (GaN), manifested in both its nanoparticle and nanosheet forms, has garnered significant attention.

Journal of Materials Chemistry CVol. 13(21)
University of Electronic Science and Technology of China (CN), Shandong University (CN), Dongguan University of Technology (CN), Key Laboratory of Guangdong Province (CN), Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (CN)
Openalex Percentile: Top 8%
GaN-based semiconductor devices and materials
3.77
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