Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinements, essential for the operation of single-electron transistors (SETs), and allows one to explore the interplay of confinement, electron interactions, band renormalization, and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable Coulomb blockade resonances. These SETs allow us to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalization crucial for future advanced gate-tunable quantum devices and circuits in tBLG including, e.g., quantum dots and Josephson junction arrays.

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Publication Details

Journal
Nano Letters
Published
2025-04-14
DOI
https://doi.org/10.1021/acs.nanolett.4c06492
Citations
1
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
1.25
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article

Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

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article

Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Christoph Stampfer, Martin Otto, Dante Marvin Kennes, Robin J. Dolleman, Eike Icking, Alexander Rothstein, Takashi Taniguchi, Kenji Watanabe, K. Hecker, Florian Lentz, Luca Banszerus, Ammon Fischer, Bernd Beschoten, Stefan Trellenkamp, Anthony Achtermann
article en
1 citations

Abstract

Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinements, essential for the operation of single-electron transistors (SETs), and allows one to explore the interplay of confinement, electron interactions, band renormalization, and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable Coulomb blockade resonances. These SETs allow us to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalization crucial for future advanced gate-tunable quantum devices and circuits in tBLG including, e.g., quantum dots and Josephson junction arrays.

Nano LettersVol. 25(16)
Forschungszentrum Jülich (DE), National Institute for Materials Science (JP), Grunberger Diabetes Institute (US), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Jülich Aachen Research Alliance (DE), Center for Free-Electron Laser Science (DE), IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gemeinnützige GmbH (IMMS GmbH) (DE), Max Planck Institute for the Structure and Dynamics of Matter (DE), RWTH Aachen University (DE)
Affordable and clean energy
Openalex Percentile: Top 22%
Quantum and electron transport phenomena
1.25
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