CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory

Abstract A CMOS compatible RRAM device with TaN/Ta/TaO x /TaN structure was proposed for nonvolatile memory applications. Excellent resistive switching characteristics, including low operation voltages (< 1 V), low operation current (< 100 μA), good programming/erasing endurance (> 10 6 cycles), satisfactory uniformity, and reliable data retention, have been demonstrated. Furthermore, all of the elements in the fabricated TaN/Ta/TaO x /TaN devices are highly compatible with modern CMOS manufacturing process, showing promising application in the next generation of nonvolatile memory.