Light extraction improvement via ITO p-electrodes for InGaN red micro-LEDs emitting at 640 nm

We present light extraction efficiency (LEE) improvement for InGaN red micro-light emitting diodes (micro-LEDs) of various sizes operating at low current densities. We compared the characteristics of micro-LEDs with indium tin oxide (ITO) transparent p-electrodes with conventional opaque metal p-electrodes. 50 µm × 50 µm micro-LEDs with ITO p-electrodes achieved a peak on-wafer external quantum efficiency (EQE) of 2.54% with an emission wavelength of 640 nm at a current density as low as 0.4 A/cm 2 . This represents a 1.18-fold improvement in peak EQE compared to devices with metal p-electrodes. Light ray tracing simulation confirmed that the ITO p-electrodes exhibit 1.18 times higher light escape than metal-based micro-LEDs, validating the role of enhanced light extraction. These findings provide valuable insights for advancing high-definition display and VR applications.