Low threshold InAs/InP quantum dot lasers

InAs/InP quantum dot (QD) lasers are promising light sources for optical communication due to their discrete energy states, offering advantages such as low threshold current density and enhanced thermal stability. However, challenges remain in achieving uniform QDs on the InAs/InAlGaAs/InP material system to ensure low threshold current density and high-temperature operation. This work demonstrates low threshold, high-temperature L-band InAs/InAlGaAs/InP QD lasers grown on InP (001) substrates with the indium-flush technique to optimize QD uniformity. The as-cleaved seven-stack QD lasers under pulsed injection exhibit a very low threshold current density of 69 A/cm<sup>2</sup> per QD layer and achieve a high maximum operating temperature of 130 °C. These results represent significant progress in InAs/InP QD laser development, highlighting the potential for high-performance semiconductor light sources in optical communication.

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Publication Details

Journal
Optics Express
Published
2025-04-14
DOI
https://doi.org/10.1364/oe.561471
Citations
6
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
4.38
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article

Low threshold InAs/InP quantum dot lasers

Jiajing Yuan, Huiwen Deng, A.J. Seeds, Hui Jia et al.
6 citations
Optics Express
Semiconductor Lasers and Optical Devices
4.38
article

Low threshold InAs/InP quantum dot lasers

Jiajing Yuan, Huiwen Deng, A.J. Seeds, Hui Jia, Mingchu Tang, Huiyun Liu, Thierry Baron, Shangfeng Liu, Haotian Zeng, Kongming Liu, Yangqian Wang, Calum Dear, Jae‐Seong Park, Marie‐Blandine Martin, Chong Chen, Qiang Li, Jun Li
article en
6 citations

Abstract

InAs/InP quantum dot (QD) lasers are promising light sources for optical communication due to their discrete energy states, offering advantages such as low threshold current density and enhanced thermal stability. However, challenges remain in achieving uniform QDs on the InAs/InAlGaAs/InP material system to ensure low threshold current density and high-temperature operation. This work demonstrates low threshold, high-temperature L-band InAs/InAlGaAs/InP QD lasers grown on InP (001) substrates with the indium-flush technique to optimize QD uniformity. The as-cleaved seven-stack QD lasers under pulsed injection exhibit a very low threshold current density of 69 A/cm<sup>2</sup> per QD layer and achieve a high maximum operating temperature of 130 °C. These results represent significant progress in InAs/InP QD laser development, highlighting the potential for high-performance semiconductor light sources in optical communication.

Optics ExpressVol. 33(9)
Cardiff University (GB), Université Grenoble Alpes (FR)
Affordable and clean energy
Openalex Percentile: Top 6%
Semiconductor Lasers and Optical Devices
4.38
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