A‐Site Cationic Variation to Expand the Sacrificial Layer AVO<sub>3</sub> Family Dissolving in Water

Abstract In the growing field of low‐cost electronics, the epitaxy of complex oxide thin films on a Si substrate requires significant technical means. Therefore, a large attention is paid to the release of a freestanding oxide of interest from its deposition support which is then placed onto a low‐cost substrate, via the etching of an intermediate sacrificial layer. The use of a sacrificial layer offers several advantages since the flexible polymer exploited for the transfer can also be fully utilized to design a flexible heterostructure. For green technology, more and more research investigations are being undertaken on these sacrificial layers etched by water. While Sr 3 Al 2 O 6 and SrVO 3 are archetypical examples, the need to find new materials with different lattice parameters and symmetry is critical to reach the epitaxy of numerous materials of interest. In this study, the possibilities of an A‐site cationic variation in A VO 3 with A = Sr and/or Ca thin films are highlighted to expand the water‐soluble material's family reaching the smallest lattice parameter ever presented up to now. In addition to bring various compounds with different ageing properties to the literature, optical spectrophotometry operando characterizations to follow the chemical etching of the sacrificial layers in real‐time are exploited.

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Publication Details

Journal
Advanced Materials Interfaces
Published
2025-04-14
DOI
https://doi.org/10.1002/admi.202500094
Citations
3
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
1.55

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article

A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water

Deepak Dagur, David B. Adrian, Ulrike Lüders, Moussa Mezhoud et al.
3 citations
Advanced Materials Interfaces
Electronic and Structural Properties of Oxides
1.55
article

A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water

Deepak Dagur, David B. Adrian, Ulrike Lüders, Moussa Mezhoud, Piero Torelli, Vincent Polewczyk, Giovanni Vinai, Aïmane Cheikh, Yves Dumont, Simon Hurand, Arnaud Fouchet, Oualyd El‐Khaloufi, Bruno Bérini, Moussa Merbaki, Luca Braglia
article en
3 citations

Abstract

Abstract In the growing field of low‐cost electronics, the epitaxy of complex oxide thin films on a Si substrate requires significant technical means. Therefore, a large attention is paid to the release of a freestanding oxide of interest from its deposition support which is then placed onto a low‐cost substrate, via the etching of an intermediate sacrificial layer. The use of a sacrificial layer offers several advantages since the flexible polymer exploited for the transfer can also be fully utilized to design a flexible heterostructure. For green technology, more and more research investigations are being undertaken on these sacrificial layers etched by water. While Sr 3 Al 2 O 6 and SrVO 3 are archetypical examples, the need to find new materials with different lattice parameters and symmetry is critical to reach the epitaxy of numerous materials of interest. In this study, the possibilities of an A‐site cationic variation in A VO 3 with A = Sr and/or Ca thin films are highlighted to expand the water‐soluble material's family reaching the smallest lattice parameter ever presented up to now. In addition to bring various compounds with different ageing properties to the literature, optical spectrophotometry operando characterizations to follow the chemical etching of the sacrificial layers in real‐time are exploited.

Advanced Materials InterfacesVol. 12(12)
Centre National de la Recherche Scientifique (FR), École Nationale Supérieure de Mécanique et d'Aérotechnique (FR), École Nationale Supérieure d'Ingénieurs de Caen (FR), Université de Versailles Saint-Quentin-en-Yvelines (FR), Université Paris-Saclay (FR), AREA Science Park (IT), Institut Pprime (FR), Université de Poitiers (FR), Istituto Officina dei Materiali (IT), Normandie Université (FR), Groupe d’Étude de la Matière Condensée (FR), Université de Caen Normandie (FR)
Agence Nationale de la Recherche, Région Normandie
Openalex Percentile: Top 19%
Electronic and Structural Properties of Oxides
1.55
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