Spin-to-Charge Conversion in Orthorhombic RhSi Crystalline Thin Films

The rise of nonmagnetic topological semimetals, which provide a promising platform for observing and controlling various spin-orbit effects, has led to significant advancements in the field of topological spintronics. RhSi exists in two distinct polymorphs: cubic and orthorhombic crystal structures. The noncentrosymmetric B20 cubic structure has been extensively studied in the bulk for hosting unconventional multifold Fermions. In contrast, the orthorhombic structure, which crystallizes in the <i>Pnma</i> space group (No. 62), remains less explored and belongs to the family of topological Dirac semimetals. In this work, we investigate the structural, magnetic, and electrical properties of RhSi textured-epitaxial films grown on Si(111) substrates, which crystallize in the orthorhombic structure. We investigate the efficiency of pure spin current transport across RhSi/permalloy interfaces and the subsequent spin-to-charge current conversion via inverse spin Hall effect measurements. The experimentally determined spin Hall conductivity in orthorhombic RhSi reaches a maximum value of 126 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mfrac><mml:mi>ℏ</mml:mi><mml:mi>e</mml:mi></mml:mfrac><mml:mo>(</mml:mo><mml:mi>Ω</mml:mi><mml:mo>·</mml:mo><mml:mi>cm</mml:mi><mml:msup><mml:mo>)</mml:mo><mml:mrow><mml:mo>-</mml:mo><mml:mn>1</mml:mn></mml:mrow></mml:msup></mml:math> at 10 K, which aligns reasonably well with first-principles calculations that attribute the spin Hall effect in RhSi to the spin Berry curvature mechanism. Additionally, we demonstrate the ability to achieve a sizable spin-mixing conductance (34.7 nm<sup>-2</sup>) and an exceptionally high interfacial spin transparency of 88% in this heterostructure, underlining its potential for spin-orbit torque switching applications. Overall, this study broadens the scope of topological spintronics, emphasizing the controlled interfacial spin-transport processes and subsequent spin-to-charge conversion in a previously unexplored topological Dirac semimetal RhSi/ferromagnet heterostructure.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-04-14
DOI
https://doi.org/10.1021/acsami.5c01170
Citations
1
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.25

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article

Spin-to-Charge Conversion in Orthorhombic RhSi Crystalline Thin Films

Claudia Felser, Alexander Tahn, Darius Pohl, Iñigo Robredo et al.
1 citations
ACS Applied Materials & Interfaces
Magnetic properties of thin films
1.25
article

Spin-to-Charge Conversion in Orthorhombic RhSi Crystalline Thin Films

Claudia Felser, Alexander Tahn, Darius Pohl, Iñigo Robredo, Edouard Lesne, Binghai Yan, Αναστάσιος Μάρκου, Yan Sun, Bernd Rellinghaus, Rebeca Ibarra, Hua Lv, Qun Yang, Surya N. Panda
article en
1 citations

Abstract

The rise of nonmagnetic topological semimetals, which provide a promising platform for observing and controlling various spin-orbit effects, has led to significant advancements in the field of topological spintronics. RhSi exists in two distinct polymorphs: cubic and orthorhombic crystal structures. The noncentrosymmetric B20 cubic structure has been extensively studied in the bulk for hosting unconventional multifold Fermions. In contrast, the orthorhombic structure, which crystallizes in the <i>Pnma</i> space group (No. 62), remains less explored and belongs to the family of topological Dirac semimetals. In this work, we investigate the structural, magnetic, and electrical properties of RhSi textured-epitaxial films grown on Si(111) substrates, which crystallize in the orthorhombic structure. We investigate the efficiency of pure spin current transport across RhSi/permalloy interfaces and the subsequent spin-to-charge current conversion via inverse spin Hall effect measurements. The experimentally determined spin Hall conductivity in orthorhombic RhSi reaches a maximum value of 126 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mfrac><mml:mi>ℏ</mml:mi><mml:mi>e</mml:mi></mml:mfrac><mml:mo>(</mml:mo><mml:mi>Ω</mml:mi><mml:mo>·</mml:mo><mml:mi>cm</mml:mi><mml:msup><mml:mo>)</mml:mo><mml:mrow><mml:mo>-</mml:mo><mml:mn>1</mml:mn></mml:mrow></mml:msup></mml:math> at 10 K, which aligns reasonably well with first-principles calculations that attribute the spin Hall effect in RhSi to the spin Berry curvature mechanism. Additionally, we demonstrate the ability to achieve a sizable spin-mixing conductance (34.7 nm<sup>-2</sup>) and an exceptionally high interfacial spin transparency of 88% in this heterostructure, underlining its potential for spin-orbit torque switching applications. Overall, this study broadens the scope of topological spintronics, emphasizing the controlled interfacial spin-transport processes and subsequent spin-to-charge conversion in a previously unexplored topological Dirac semimetal RhSi/ferromagnet heterostructure.

ACS Applied Materials & InterfacesVol. 17(16)
University of Ioannina (GR), University of California System (US), Max Planck Institute for Chemical Physics of Solids (DE), Weizmann Institute of Science (IL), Technische Universität Dresden (DE)
Max-Planck-Gesellschaft, Sächsische Aufbaubank, Horizon 2020 Framework Programme
Affordable and clean energy
Openalex Percentile: Top 22%
Magnetic properties of thin films
1.25
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