An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures
Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C<sup>2</sup>RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C<sup>2</sup>RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C<sup>2</sup>RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.
Authors
- F. Allibert (ORCID: https://orcid.org/0000-0003-3864-2845)
- Andreas Grenmyr (ORCID: https://orcid.org/0000-0003-0759-0667)
- Jin Hee Bae
- Ionut Radu (ORCID: https://orcid.org/0000-0002-6839-1015)
- Qing‐Tai Zhao (ORCID: https://orcid.org/0000-0002-2794-2757)
- Joachim Knoch (ORCID: https://orcid.org/0000-0001-5136-9287)
- Benjamin Richstein (ORCID: https://orcid.org/0000-0003-1120-5426)
- Jingxuan Sun (ORCID: https://orcid.org/0000-0003-1255-3908)
- Detlev Grützmacher (ORCID: https://orcid.org/0000-0001-6290-9672)
- Yi Han (ORCID: https://orcid.org/0000-0001-7873-1020)
Institutions
- Soitec (France) (FR)
- Forschungszentrum Jülich (DE)
- Institute of Semiconductor Physics (RU)
- RWTH Aachen University (DE)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1021/acs.nanolett.4c05855
- Citations
- 4
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- Deutsche Forschungsgemeinschaft