Hydrogen‐free oxide thin‐film transistor toward resolving hydrogen‐associated instability

Abstract We propose and demonstrate the concept of hydrogen‐free (H‐free) amorphous oxide semiconductor thin‐film transistors (AOS TFTs) to resolve hydrogen‐associated instability of TFT. H‐free SiO 2 and SiN x films were successfully deposited by large‐area inductively coupled plasma chemical vapor deposition (ICP‐CVD) using hydrogen‐free source gases. H‐free SiO 2 and SiN x films were applied as the gate insulator and passivation layers of the TFT, respectively. The H‐free In–Ga–Zn–Sn–O (IGZTO) TFT exhibited field‐effect mobility of 23.2 cm 2 V −1 s −1 and excellent stability under positive gate bias stresses for 7,200 s at stress temperatures in the range of 60–100°C.