Analytical and empirical correlation between magnetic domain wall creep behavior and fundamental magnetic properties
Magnetic domain walls (DWs) often exhibit creep motion, a form of collective dynamics observed in weak magnetic fields. In this study, we investigate the correlation between magnetic DW creep behavior and fundamental magnetic properties through analytical analysis and experimental demonstration. Specifically, we examined DW creep motion in a series of Pt/Co/X heterostructures, where X represents various non-magnetic layers (Ta, Ti, Ru, and Au) that are critical for inducing magnetic chirality. By systematically varying the Co layer thickness for each material X, we uncover a universal correlation between the creep scaling constant and magnetic parameters, independent of both the Co layer thickness and the choice of material X. These findings underscore the dominant role of the Pt/Co interface, rather than the Co/X interface, in governing DW creep behavior, enabling the independent tuning of both creep parameters and magnetic chirality. The present results provide clear and practical guidelines for engineering spintronic devices, facilitating advances in device performance and design.
Authors
- Dae‐Yun Kim (ORCID: https://orcid.org/0000-0002-5940-8436)
- Seong-Hyub Lee (ORCID: https://orcid.org/0000-0002-4432-4870)
- Hyunsoo Yang (ORCID: https://orcid.org/0000-0003-0907-2898)
- Fanrui Hu (ORCID: https://orcid.org/0009-0002-5745-9579)
- Sug‐Bong Choe (ORCID: https://orcid.org/0000-0001-7493-1025)
Institutions
- Seoul National University (KR)
- National University of Singapore (SG)
- New Generation University College (ET)
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-04-13
- DOI
- https://doi.org/10.1038/s41598-025-96871-1
- Citations
- 1
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- Samsung Advanced Institute of Technology
- National Research Foundation
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea
- Samsung