Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures

Abstract Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS 2 and bulk InSe was developed. This heterojunction exhibits a type-I band alignment that facilitates rapid energy transfer from the wide bandgap MoS 2 to the narrow bandgap InSe resulting in quenching of the MoS 2 photoluminescence (PL) emission and enhancement of the A exciton emission in InSe. Temperature-dependent PL measurements of MoS 2 on SiO 2 , MoS 2 on InSe, and bare InSe revealed the critical role of defect trapping and electron-phonon coupling in the optical response of MoS 2 on InSe. These results demonstrate that heterostructures combining monolayer MoS 2 on bulk InSe, showing marked improvement relative to bare InSe, would be advantageous when incorporated into optoelectronic devices such as photodetectors, light emitters, and color converters and highlights the benefit of creating van der Waals (vdW) heterostructures with tailored properties.

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Publication Details

Journal
npj 2D Materials and Applications
Published
2025-04-13
DOI
https://doi.org/10.1038/s41699-025-00549-1
Citations
5
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.59

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article

Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures

Rahul Rao, Michael Snure, Joshua R. Hendrickson, Sergiy Krylyuk et al.
5 citations
npj 2D Materials and Applications
2D Materials and Applications
2.59
article

Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures

Rahul Rao, Michael Snure, Joshua R. Hendrickson, Sergiy Krylyuk, Nicholas R. Glavin, Michael Altvater, Nicholas A. Pike, Ruth Pachter, Christopher E. Stevens, Deep Jariwala, Albert V. Davydov
article en
5 citations

Abstract

Abstract Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS 2 and bulk InSe was developed. This heterojunction exhibits a type-I band alignment that facilitates rapid energy transfer from the wide bandgap MoS 2 to the narrow bandgap InSe resulting in quenching of the MoS 2 photoluminescence (PL) emission and enhancement of the A exciton emission in InSe. Temperature-dependent PL measurements of MoS 2 on SiO 2 , MoS 2 on InSe, and bare InSe revealed the critical role of defect trapping and electron-phonon coupling in the optical response of MoS 2 on InSe. These results demonstrate that heterostructures combining monolayer MoS 2 on bulk InSe, showing marked improvement relative to bare InSe, would be advantageous when incorporated into optoelectronic devices such as photodetectors, light emitters, and color converters and highlights the benefit of creating van der Waals (vdW) heterostructures with tailored properties.

npj 2D Materials and ApplicationsVol. 9(1)
National Institute of Standards and Technology (US), KBR (United States) (US), Wright-Patterson Air Force Base (US), Dayton Clinical Oncology Program (US), University of Pennsylvania (US)
Asian Office of Aerospace Research and Development, National Institute of Standards and Technology, Air Force Office of Scientific Research
Openalex Percentile: Top 11%
2D Materials and Applications
2.59
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