Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions
Doping of β-Ga 2 O 3 (100) with Si by ion implantation onto heated substrates is investigated. The study reveals complex ion beam-induced defect processes in β-Ga 2 O 3 , characterized by the formation of various defect types and their temperature-dependent transformation. By employing X-Ray Diffraction, Rutherford Backscattering Spectrometry, Particle-Induced X-Ray Emission, X-ray Absorption Near Edge Structure Spectroscopy, Transmission Electron Microscopy, and Density Functional Theory analyses, we examine lattice deformation, identify the local environment of dopants, assess electronic structure modifications, and verify the presence of extended defects induced by ion implantation. Our findings highlight the predominant contribution of substitutional and interstitial Si ions incorporated into complexes that act as donors manifesting n-type conductivity, while some fraction of the defects form complexes that act as traps for charge carriers. Notably, no monoclinic phase transformations were observed during implantation despite substrate temperature variations from 300 to 800 °C.
Authors
- Zbigniew Galazka (ORCID: https://orcid.org/0000-0003-0812-2873)
- Frans Munnik (ORCID: https://orcid.org/0000-0003-2506-6869)
- Nora Haufe
- Ulrich Kentsch (ORCID: https://orcid.org/0000-0001-5295-2554)
- I.N. Demchenko (ORCID: https://orcid.org/0000-0003-3680-1072)
- J. Z. Domagała (ORCID: https://orcid.org/0000-0001-5515-9877)
- A. Derkachova (ORCID: https://orcid.org/0000-0003-1891-7637)
- Y. Syryanyy (ORCID: https://orcid.org/0000-0003-4042-9162)
- R. Minikayev (ORCID: https://orcid.org/0000-0002-4334-7472)
- Marcin Zając (ORCID: https://orcid.org/0000-0002-7782-5364)
- Asiye Shokri (ORCID: https://orcid.org/0000-0002-8574-4353)
- Yevgen Melikhov (ORCID: https://orcid.org/0000-0002-9787-5238)
- Alfred Reck
Institutions
- Warsaw University of Technology (PL)
- Jagiellonian University (PL)
- Helmholtz-Zentrum Dresden-Rossendorf (DE)
- Fraunhofer Institute for Photonic Microsystems (DE)
- Institute of Electron Technology (PL)
- Institute of Fundamental Technological Research (PL)
- Leibniz Institute for Crystal Growth (DE)
- Institute of Plasma Physics and Laser Microfusion (PL)
- Polish Academy of Sciences (PL)
Publication Details
- Journal
- Acta Materialia
- Published
- 2025-04-11
- DOI
- https://doi.org/10.1016/j.actamat.2025.121036
- Citations
- 2
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.85